Changes in the microhardness of SiC (6H) samples in neutron irradiation

Journal Article · Sat Mar 01 04:00:00 EST 1986 · Sov. At. Energy (Engl. Transl.); (United States)

OSTI ID:5632209

Brudnyi, V N; Tolebaev, B T

The authors study the microhardness of SiC (6H) crystals irradiated with reactor neutrons to a flux of 1.10/sup 17/-1.10/sup 21/ cm/sup -2/. The crystals were deformed by indentation on a PMT-3 microhardness tester provided with an attachment for the automatic movement of the indenter. As a result of neutron irradiation, the microhardness of SiC (6H) increased 1.6 times while at the same time the lattice parameter increased by about 1%. The microhardness of irradiated SiH (6H) decreases upon annealing at a temperature greater than or equal to 1000-1600 degrees C because the concentration of radiation-induced defects decreases; this is confirmed by measurements of the electrical properties.

• OSTI ID: 5632209
• Journal Information: Sov. At. Energy (Engl. Transl.); (United States), Journal Name: Sov. At. Energy (Engl. Transl.); (United States) Vol. 59:3; ISSN SATEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360203 -- Ceramics
Cermets
& Refractories-- Mechanical Properties
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
ANNEALING
CARBIDES
CARBON COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
HARDENING
HARDNESS
HEAT TREATMENTS
IRRADIATION
LATTICE PARAMETERS
MATERIALS
MATERIALS TESTING
MECHANICAL PROPERTIES
MECHANICAL TESTS
MICROHARDNESS
N-TYPE CONDUCTORS
NEUTRON FLUENCE
NEUTRON FLUX
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION FLUX
RADIATION HARDENING
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON COMPOUNDS
STRESS ANALYSIS
TEMPERATURE EFFECTS
TESTING