Using heavy ion backscattering spectrometry (HIBS) to solve integrated circuit manufacturing problems

Conference · Mon Dec 01 04:00:00 EST 1997

OSTI ID:563180

Banks, J C; Doyle, B L; Knapp, J A ^[1]; Werho, D; Gregory, R B ^[2]; Anthony, M; Hurd, T Q ^[3]; Diebold, A C ^[4]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Motorola, Mesa, AZ (United States)
3. Texas Instruments, Dallas, TX (United States)
4. SEMATECH, Austin, TX (United States)

Heavy Ion Backscattering Spectrometry (HIBS) is a new IBA tool for measuring extremely low levels of surface contamination on very pure substrates, such as Si wafers used in the manufacture of integrated circuits. HIBS derives its high sensitivity through the use of moderately low energy ({approximately} 100 keV) heavy ions (e.g., C{sup 12}) to boost the RBS cross-section to levels approaching 1,000 barns, and by using specially designed time-of-flight detectors which have been optimized to provide a large scattering solid angle with minimal kinematic broadening. A HIBS User Facility has been created which provides US industry, national laboratories, and universities with a place for conducting ultra-trace level surface contamination studies. A review of the HIBS technique is given and examples of using the facility to calibrate Total-Reflection X-ray Fluorescence Spectroscopy (TXRF) instruments and develop wafer cleaning processes are discussed.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Assistant Secretary for Human Resources and Administration, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 563180
• Report Number(s): SAND--97-3114C; CONF-970785--; ON: DE98001699; BR: DP0102011
• Country of Publication: United States
• Language: English

Related Subjects

40 CHEMISTRY
42 ENGINEERING
BACKSCATTERING
CALIBRATION
DETECTION
HEAVY IONS
INTEGRATED CIRCUITS
ION SPECTROSCOPY
MANUFACTURING
MONITORING
SILICON
SURFACE CLEANING
SURFACE CONTAMINATION