Nonformity of the electron density in amorphous silicon films

Journal Article · Sun Dec 01 00:00:00 EST 1985 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:5631378

Ionova, E N; Cheremskoi, P G; Fedorenko, A I; Kolupaev, I N; Ryabchun, A A

The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

• Research Organization: V.I. Lenin Khar'kov Polytechnic Institute
• OSTI ID: 5631378
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Vol. 21:7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ELECTRON DENSITY
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
AMORPHOUS STATE
HETEROGENEOUS EFFECTS
MONOCRYSTALS
SMALL ANGLE SCATTERING
THIN FILMS
VACUUM COATING
COHERENT SCATTERING
CRYSTALS
DEPOSITION
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
FILMS
MICROSCOPY
SCATTERING
SEMIMETALS
SURFACE COATING
360603* - Materials- Properties