Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties

Journal Article · Fri Jun 15 04:00:00 EDT 2012 · Semiconductors

DOI:https://doi.org/10.1134/S1063782612060097· OSTI ID:22004663

Kazanskii, A G; Kashkarov, P K ^[1]; Konkov, O I; Terukov, E I ^[2]; Forsh, P A; Khenkin, M V ^[1]; Kukin, A V ^[2]; Beresna, M; Kazansky, P ^[3]

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1. Moscow State University, Physical Department (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
3. University of Southampton, Optoelectronic Research Center (United Kingdom)

The effect of the femtosecond laser treatment of hydrogenated amorphous silicon (a-Si:H) films on their structural, optical, and photoelectric properties is studied. Under the experimental conditions applied in the study, laser treatment of the film with different radiation intensities induces structural changes that are nonuniform over the film surface. An increase in the radiation intensity yields an increase in the contribution of the nanocrystalline phase to the structure, averaged over the sample surface, as well as an increase in the conductance and photoconductance of the samples. At the same time, for all of the samples, the absorption spectrum obtained by the constant-photocurrent method has a shape typical for those of amorphous silicon. Obtained results indicate the possibility of a-Si:H films photoconductance increase by femtosecond pulse laser treatment.

• OSTI ID: 22004663
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 46; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTRA
CRYSTALS
FILMS
LASERS
NANOSTRUCTURES
PHOTOCONDUCTIVITY
PULSES
SHAPE
SILICON
SURFACES