Integrated quantum well lasers for wavelength division multiplexing

Patent · Tue Mar 18 04:00:00 EST 1986

OSTI ID:5628277

Carney, J K; Kolbas, R M

An integrated array of quantum well lasers is described which has quantum well lasers for providing light beams each having a different but known wavelength for use in wavelength division multiplexing. The array consists of a single crystal semiconductor substrate having simultaneously grown thereon from a single growth sequence a plurality of compositionally identical epitaxial layers to form quantum well heterostructure lasers, each of the plurality of quantum well lasers comprising: a first cladding region grown on the substrate; an active region of a determined thickness which includes alternating thin layers of narrow band-gap well layers and wide band-gap barrier layers followed by a final narrow band-gap well layer successively grown on the first cladding region, wherein the determined thickness is different from one to the next of the plurality of quantum well lasers; and a second cladding region grown on the active region, each of the quantum well lasers being electrically and optically isolated.

• Assignee: Honeywell, Inc., Minneapolis, MN
• Patent Number(s): US 4577321
• OSTI ID: 5628277
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CRYSTAL GROWTH
CRYSTALS
DESIGN
DIMENSIONS
ELECTRICAL PROPERTIES
EPITAXY
HETEROJUNCTIONS
JUNCTIONS
LASERS
LAYERS
MATERIALS
MONOCRYSTALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SUBSTRATES
THICKNESS
WAVELENGTHS