Ion-implanted planar-buried-heterostructure diode laser

Patent · Tue Jan 01 04:00:00 EST 1991

OSTI ID:867985

Brennan, Thomas M ^[1]; Hammons, Burrell E ^[2]; Myers, David R ^[1]; Vawter, Gregory A ^[1]

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1. Albuquerque, NM
2. Tijeras, NM

A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

• Research Organization: AT & T CORP
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 5048038
• OSTI ID: 867985
• Country of Publication: United States
• Language: English

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10
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14
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26
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active
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compositionally
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defining
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disposed
extent
graded
graded-index
iii-v
implanted
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ion-implanted
ion-implanted planar-buried-heterostructure
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lateral
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multi-quantum
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p-type
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planar-buried-heterostructure
planar-buried-heterostructure diode
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separate-confinement-heterostructure
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single
single quantum
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