Electronic structure of amorphous semiconductor heterojunctions by photoemission and photoabsorption spectroscopy

Conference · Mon Oct 01 04:00:00 EDT 1984 · AIP Conf. Proc.; (United States)

OSTI ID:5625029

Abeles, B; Wagner, I; Eberhardt, W; Stoehr, J; Stasiewski, H; Sette, F

Heterojunctions of a-Si:H/a-Si/sub 1-x/C/sub x/:H and a-Si:H/a-SiN/sub x/:H, deposited in situ by RF plasma CVD, were investigated by photoemission and photoabsorption using synchrotron radiation. The valence band maximum of a-Si:H coincides with that of a-Si/sub x/C/sub 1-x/:H and it is 1.4 +- 0.2 eV above the VBM of a-SiN/sub x/:H. As the a-Si:H layer thickness decreases from 800A to 5A, the energy bandgap, determined from the difference between the L/sub 2,3/ edge, the Si-2p binding energy and VBM, becomes progressively smaller than the optical bandgap. This suggests that excitonic effects on the L/sub 2,3/ edge are enhanced as the dimensionality is reduced from 3D to 2D.

• Research Organization: Exxon Research and Engineering Company, Annandale, NJ 08801
• OSTI ID: 5625029
• Report Number(s): CONF-840881-
• Conference Information: Journal Name: AIP Conf. Proc.; (United States) Journal Volume: 120:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
AMORPHOUS STATE
BREMSSTRAHLUNG
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DATA
DEPOSITION
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ENERGY GAP
EXCITONS
EXPERIMENTAL DATA
HETEROJUNCTIONS
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
JUNCTIONS
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PLASMA
QUASI PARTICLES
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SILANES
SILICON CARBIDES
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE COATING
SYNCHROTRON RADIATION