Photoemission and photoyield of amorphous Si films

Journal Article · Thu Dec 15 04:00:00 EST 1983 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.28.7087· OSTI ID:5319642

Wesner, D; Eberhardt, W

We have studied the electronic structure of in situ sputtered amorphous Si (a-Si) and hydrogenated amorphous Si (a-Si:H) films with the use of angle-integrated photoemission with synchrotron radiation. The valence-band emission gives evidence for the presence of Si--H--H--Si broken-bond configurations in the film. Combining Si 2p core-level photoemission measurements with photoabsorption (photoyield) studies of the Si 2p edge, we have also followed the evolution of the band gap with sample preparation and annealing. The band gap decreases with higher annealing temperatures, and the hydrogenated films initially have a 0.3-eV-larger band gap than does a-Si.

• Research Organization: Brookhaven National Laboratory, Upton, New York 11973
• OSTI ID: 5319642
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 28:12; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
ANNEALING
BREMSSTRAHLUNG
DATA
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY GAP
EXPERIMENTAL DATA
FILMS
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
MEDIUM TEMPERATURE
NUMERICAL DATA
PHOTOELECTRON SPECTROSCOPY
RADIATIONS
SAMPLE PREPARATION
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SPECTROSCOPY
SPUTTERING
SYNCHROTRON RADIATION
ULTRAHIGH VACUUM