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In situ growth and flux pinning in Ag-doped YBa sub 2 Cu sub 3 O sub 7 minus y thin films

Journal Article · · Physical Review, B: Condensed Matter; (USA)
; ;  [1]; ;  [2]
  1. Department of Physics, National Taiwan University, Taipei, Taiwan (TW)
  2. Department of Physics, National Taiwan Normal University, Taipei, (Taiwan)

We have grown {ital in} {ital situ} Ag-doped YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital y}} thin films by high-pressure magnetron sputtering using a stoichiometric target. The sputtering was carried out in a mixture of Ar (70%) and O{sub 2} (30%) at a pressure of 200 mTorr, with the substrate temperature kept at about 700 {degree}C during sputtering. We made a relatively high-pressure oxygen environment by employing an oxygen jet near the substrates. After deposition one atmosphere of O{sub 2} was introduced into the chamber, and the sample was cooled down to room temperature slowly (5 {degree}C/min). This method gives highly reproducible superconducting films with {ital T}{sub {ital c}} (50%) at 83--88 K and zero resistance at 78--87 K depending on the growth conditions and the substrates used. In magnetic fields there is a narrowing of the resistive transition width for Y-Ba-Cu-O films with Ag impurities. We attribute the narrowing to the enhanced flux pinning due to the Ag impurities.

OSTI ID:
5622232
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:10; ISSN PRBMD; ISSN 0163-1829
Country of Publication:
United States
Language:
English