Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Supercooling of silicon and germanium after laser melting

Conference ·
DOI:https://doi.org/10.1557/PROC-100-505· OSTI ID:5621322
Following pulsed laser melting, supercoolings of 505/sup 0/K in Si and 430/sup 0/K in Ge were observed prior to bulk nucleation. These large supercoolings are obtained because of the extremely high thermal quench which follows laser irradiation. Nucleation rates were estimated to be approx.10/sup 29/ events/m/sup 3//s. Assuming that homogeneous nucleation was achieved, surface energies are estimated to be 0.34 J/m/sup 2/ for Si and 0.24 J/m/sup 2/ for Ge. These results are in reasonable agreement with traditional homogeneous nucleation experiments sensitive to rates of only approx.10/sup 10/ events/m/sup 3//s. This laser melting technique is applicable to nucleation studies in a wide variety of materials. 21 refs., 3 figs.
Research Organization:
Sandia National Labs., Albuquerque, NM (USA); Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5621322
Report Number(s):
SAND-87-1719C; CONF-871124-53; ON: DE88004957
Country of Publication:
United States
Language:
English