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Thermoelectric properties of pressure-sintered Si sub 0. 8 Ge sub 0. 2 thermoelectric alloys

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.348408· OSTI ID:5620225
 [1]; ; ; ;  [2]
  1. Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 (US)
  2. General Electric Company, P. O. Box 8555, Philadelphia, Pennsylvania 19101 (USA)

The thermoelectric properties of 28 sintered Si{sub 0.8} Ge{sub 0.2} alloys, heavily doped with either boron or phosphorus and prepared from powders with median particle sizes ranging from about 1 {mu}m to over 100 {mu}m, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle size, however, the figure of merit is not significantly increased due to a compensating reduction in the electrical conductivity. The thermoelectric figure of merit is in good agreement with results of Dismukes {ital et} {ital al}. (J. Appl. Phys. {bold 10}, 2899 (1964)) on similarly doped alloys prepared by zone-leveling techniques. The electrical and thermal conductivity are found to be sensitive to preparation procedure while the Seebeck coefficient and figure of merit are much less sensitive. The high-temperature electrical properties are consistent with charge carrier scattering by acoustic or optical phonons.

DOE Contract Number:
AC01-84NE32123
OSTI ID:
5620225
Journal Information:
Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:8; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English

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