Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Thermoelectric properties of mechanically alloyed p -type Si sub 80 Ge sub 20 alloys

Conference · · AIP Conference Proceedings (American Institute of Physics); (United States)
DOI:https://doi.org/10.1063/1.40022· OSTI ID:5685797
; ;  [1];  [2]
  1. Ames Laboratory State University Ames, IA 50011-3020 (USA)
  2. U. S. Department of Energy Office of Special Applications Washington, D.C. 20545 (USA)
We report on the thermoelectric properties of several heavily doped {ital p}-type Si{sub 80}Ge{sub 20} alloys prepared by mechanical alloying, a high energy ball milling process. The alloys were formed from elemental silicon, germanium, and boron in the form SiB{sub 4} and subsequently hot pressed. Measurements of the electrical resistivity, Seebeck coeficient, and thermal diffusivity to 1300 K indicate that these alloys have thermoelectric properties comparable to state-of-the-art Si{sub {ital x}}Ge{sub 1{minus}{ital x}} {ital p}-type materials.
DOE Contract Number:
W-7405-ENG-82
OSTI ID:
5685797
Report Number(s):
CONF-910116--
Conference Information:
Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 217:1
Country of Publication:
United States
Language:
English