Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure

Journal Article · Thu Aug 01 04:00:00 EDT 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.349587· OSTI ID:5615851

Yoshikawa, M; Itoh, H; Morita, Y ^[1]; Nashiyama, I; Misawa, S; Okumura, H; Yoshida, S ^[2]

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1. Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma, 370-12 Japan (JP)
2. Electrotechnical Laboratory, 1-1-4 Umezono, Tukuba, Ibaraki 305, Japan (JP)

Radiation effects on cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures have been studied with high-frequency capacitance-voltage measurements. It was {lt}m1;38p{gt}found that interface traps are generated at the 3C-SiC/SiO{sub 2} interface and oxide-trapped charges are built up in the oxide by {sup 60}Co gamma-ray irradiation. The generation of the interface traps and the oxide-trapped charges are affected by bias polarity applied to the gate electrode during the irradiation. Absorbed dose dependencies of their generation are discussed comparing with those of Si MOS structures.

• OSTI ID: 5615851
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 70:3; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
EQUIPMENT
GAMMA RADIATION
IONIZING RADIATIONS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SILICA
SILICON CARBIDES
SILICON COMPOUNDS
SILICON OXIDES
SURFACE COATING
TRAPS