Improved surfaces for electron devices
Technical Report
·
OSTI ID:5612370
Phase I efforts explored the feasibility of ion beam surface modification techniques to alter the secondary electron emission yields of material surfaces. An apparatus was constructed and used which allowed surface modification and subsequent measurement of secondary electron yields without breaking vacuum. Measurements of previously documented standard surfaces (Si, Mg) gave secondary yields in good agreement with literature values over a primary electron energy range from 100 to 1600 eV. The secondary electron energy distribution as obtained by the retarding potential technique was found to have a maximum at about 10 eV as expected. The change in behavior of silicon covered by a thin (15 monolayers) Ba layer was also in line with expected yields. A pulsed secondary electron collection technique was successfully used to measure the secondary yield of a simple glass (Si0{sub 2}) as well as an ion beam enhanced deposition coating (Si{sub 3}N{sub 4}) as a function of primary energy. They showed peak secondary yields of 2.3 and 1.5 respectively at a primary energy of about 300 eV.
- Research Organization:
- Spire Corp., Bedford, MA (United States)
- OSTI ID:
- 5612370
- Report Number(s):
- PB-91-186007/XAB; FR--60106; CNN: NSF-ISI87-60769
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
BEAMS
CHALCOGENIDES
ELECTRON EMISSION
ELECTRONIC EQUIPMENT
EMISSION
ENERGY RANGE
EQUIPMENT
EV RANGE
EV RANGE 100-1000
FEASIBILITY STUDIES
FILMS
ION BEAMS
KEV RANGE
KEV RANGE 01-10
MODIFICATIONS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SECONDARY EMISSION
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SURFACE TREATMENTS
SURFACES
THIN FILMS
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
BEAMS
CHALCOGENIDES
ELECTRON EMISSION
ELECTRONIC EQUIPMENT
EMISSION
ENERGY RANGE
EQUIPMENT
EV RANGE
EV RANGE 100-1000
FEASIBILITY STUDIES
FILMS
ION BEAMS
KEV RANGE
KEV RANGE 01-10
MODIFICATIONS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SECONDARY EMISSION
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SURFACE TREATMENTS
SURFACES
THIN FILMS