F and Cl detection limits in secondary ion mass spectrometry measurements of Si and SiO{sub 2} samples
Journal Article
·
· Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
- Corning Incorporated, SP-FR-01-01, Corning, New York 14831 (United States)
Usually, F and Cl negative secondary ion currents forming background signals determine detection limits for these elements in secondary ion mass spectrometry (SIMS) measurements. Technique involving changing the primary-ion current was used to determine that the ''memory effect'' is the main source of the background signal for these elements. It is shown that energy distributions of F and Cl ions forming background signals are distinctly narrower than energy distributions of these ions reflecting element bulk concentration in a Si wafer. Using this fact, the F and Cl detection limits in Si were improved by energy filtering of secondary ions. For experimental conditions used, the filtering of the secondary ion energy in a region around 60-70 eV improves the F and Cl detection limits by a factor of more than 6. The effect of an electron beam used for charge neutralization of insulator samples in a negative SIMS mode on the F and Cl detection limits was also investigated. It is shown that the simultaneous use of the primary ion and electron beams causes a synergistic increase of the background signals. It was determined that both F and Cl detection limits for the SiO{sub 2} sample are almost the same as for the Si sample when the electron and ion beams are applied simultaneously. The possible mechanism of this effect is discussed.
- OSTI ID:
- 22051154
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 5 Vol. 28; ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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