Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

F and Cl detection limits in secondary ion mass spectrometry measurements of Si and SiO{sub 2} samples

Journal Article · · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
DOI:https://doi.org/10.1116/1.3474983· OSTI ID:22051154
;  [1]
  1. Corning Incorporated, SP-FR-01-01, Corning, New York 14831 (United States)
Usually, F and Cl negative secondary ion currents forming background signals determine detection limits for these elements in secondary ion mass spectrometry (SIMS) measurements. Technique involving changing the primary-ion current was used to determine that the ''memory effect'' is the main source of the background signal for these elements. It is shown that energy distributions of F and Cl ions forming background signals are distinctly narrower than energy distributions of these ions reflecting element bulk concentration in a Si wafer. Using this fact, the F and Cl detection limits in Si were improved by energy filtering of secondary ions. For experimental conditions used, the filtering of the secondary ion energy in a region around 60-70 eV improves the F and Cl detection limits by a factor of more than 6. The effect of an electron beam used for charge neutralization of insulator samples in a negative SIMS mode on the F and Cl detection limits was also investigated. It is shown that the simultaneous use of the primary ion and electron beams causes a synergistic increase of the background signals. It was determined that both F and Cl detection limits for the SiO{sub 2} sample are almost the same as for the Si sample when the electron and ion beams are applied simultaneously. The possible mechanism of this effect is discussed.
OSTI ID:
22051154
Journal Information:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 5 Vol. 28; ISSN 1553-1813
Country of Publication:
United States
Language:
English

Similar Records

Quantitative imaging of trace B in Si and SiO{sub 2} using ToF-SIMS
Journal Article · Tue Sep 15 00:00:00 EDT 2015 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films · OSTI ID:22392210

Development of ion sources and a quantitative ion implantation technique for secondary ion mass spectrometry
Thesis/Dissertation · Mon Dec 31 23:00:00 EST 1984 · OSTI ID:5600118

Electron Flood Charge Compensation Device for Ion Trap Secondary Ion Mass Spectrometry
Journal Article · Thu Oct 31 23:00:00 EST 2002 · International Journal of Mass Spectrometry · OSTI ID:912015