Effect of carrier confinement on the laser-induced etching of GaAs/AlGaAs heterostructures

Journal Article · Mon Sep 04 00:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101696· OSTI ID:5611232

Ruberto, M N; Willner, A E; Podlesnik, D V; Osgood, Jr, R M ^[1]

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1. Microelectronics Science Laboratories and the Center for Telecommunications Research, Columbia University, New York, New York 10027 (US)

Laser-induced photochemical etching was used to etch GaAs/AlGaAs multilayered material. In this carrier-driven process, the confinement of photogenerated holes to the alternating GaAs layers resulted in the controlled lateral etching of buried GaAs layers. An application of this etching technique to forming microcleaved laser facets is described.

• OSTI ID: 5611232
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:10; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
EQUIPMENT
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HOLES
JUNCTIONS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE FINISHING