Limiting critical transverse magnetic fields of gallium

Journal Article · Wed Aug 01 04:00:00 EDT 1979 · Sov. J. Low Temp. Phys. (Engl. Transl.); (United States)

OSTI ID:5611129

Lazarev, B G; Semenenko, E E; Tutov, V I

The limiting transverse critical magnetic fields of distorted thin (90-40 A) films of gallium are investigated. It is found that the maximum critical fields necessary for total breakdown amount to 180,000 Oe and the coefficient A=3.5 (H/sub c/=A. 10/sup 4/T/sub c/). Thus, for the maximum distortion of ultrathin layers of gallium, the value of the critical magnetic field exceeds the paramagnetic limit. Based on the investigations carried out, the assumption was mode that layers of thickness 90 A are formed in the ..gamma..-modification. The superconductivity temperature after annealing to 100--150/sup 0/K of gallium layers, with a thickness of less than 90 A, increases and the maximum value of T/sub c/ of the annealed layers amounts to 7.6/sup 0/K. There are no transformation processes for these layers. Spin-orbit scattering for gallium is approximately a factor of 3 less than for bismuth. The density of states with reduction of thickness of the gallium layers also is reduced.

• Research Organization: Khar'kov Physico-Technical Institute, Academy of Sciences of the Ukrainian SSR
• OSTI ID: 5611129
• Journal Information: Sov. J. Low Temp. Phys. (Engl. Transl.); (United States), Journal Name: Sov. J. Low Temp. Phys. (Engl. Transl.); (United States) Vol. 5:8; ISSN SJLPD
• Country of Publication: United States
• Language: English

Related Subjects

656100* -- Condensed Matter Physics-- Superconductivity
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COUPLING
CRITICAL FIELD
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY-LEVEL DENSITY
FILMS
GALLIUM
INTERMEDIATE COUPLING
L-S COUPLING
MAGNETIC FIELDS
METALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SCATTERING
SUPERCONDUCTIVITY
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
ULTRALOW TEMPERATURE