Defects in electron-irradiated GaAs studied by positron lifetime spectroscopy

Journal Article · Tue Apr 01 04:00:00 EST 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.55.10467· OSTI ID:560718

Polity, A; Rudolf, F; Nagel, C; Eichler, S; Krause-Rehberg, R ^[1]

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1. Fachbereich Physik der Martin-Luther-Universitaet Halle-Wittenberg, Experimentelle Physik III, Friedemann-Bach-Platz 6, D-06108 Halle/Saale (Germany)

A systematic study of electron-irradiation-induced defects in GaAs was carried out. The irradiation was performed at low temperature (4 K) with an incident energy of 2 MeV. Both, the defect formation and annealing behavior were studied in dependence on the fluence (10{sup 15}--10{sup 19} cm{sup {minus}2}) in undoped, n-, and p-doped GaAs. Temperature-dependent positron lifetime measurements were performed between 20 and 600 K. The thermal stability of defects was studied by annealing experiments in the temperature range of 90--600 K. A defect complex, which anneals in a main stage at 300 K, was found in all GaAs samples after electron irradiation. A possible candidate for this defect is a complex of a vacancy connected with an intrinsic defect. A second vancancylike defect was observed in n-type material after annealing at 550 K. This defect was assumed to be in the As sublattice. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 560718
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 16 Vol. 55; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ANNIHILATION
CRYSTAL DEFECTS
DOPED MATERIALS
ELECTRON BEAMS
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
POSITRON BEAMS
POSITRONS
TELLURIUM ADDITIONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
VACANCIES
ZINC ADDITIONS