Study of defects in electron irradiated CuInSe{sub 2} by positron lifetime spectroscopy

Journal Article · Thu Jan 01 04:00:00 EST 1998 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.366703· OSTI ID:565601

Polity, A; Krause-Rehberg, R; Staab, T E ^[1]; Puska, M J ^[2]; Klais, J; Moeller, H J ^[3]; Meyer, B K ^[4]

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1. Fachbereich Physik, Universitaet Halle, D-06099 Halle (Saale) (Germany)
2. Laboratory of Physics, Helsinki University of Technology, 02150 Espoo (Finland)
3. Fachbereich Physik, Technische Universitaet Bergakademie Freiberg, D-09599 Freiberg (Germany)
4. Fachbereich Physik, Justus--Liebig--Universitaet Giessen, D-35392 Giessen (Germany)

CuInSe{sub 2} was studied in the as-grown state and after low-temperature (4 K) 2 MeV electron irradiation. The positron bulk lifetime of 235 ps was measured for the unirradiated sample. The positron bulk lifetime was theoretically calculated and is in good agreement with the experimental value. In addition, the defect-related lifetimes for mono-, di-, and trivacancies are theoretically determined. An increased average positron lifetime indicated after electron irradiation the appearance of open-volume defects, most probably of divacancy type. The disappearance of this defect was observed during annealing below 250 K. Other defects were formed leading to a divacancy signal at least stable up to 600 K in the temperature range above 450 K. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 565601
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 83; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
COPPER COMPOUNDS
COPPER SELENIDES
CRYSTAL DEFECTS
ELECTRON BEAMS
INDIUM COMPOUNDS
INDIUM SELENIDES
LIFETIME
MEV RANGE 01-10
POSITRONS
RADIATION EFFECTS
VACANCIES