First international high temperature electronics conference

Conference · Tue Jan 01 04:00:00 EST 1991

OSTI ID:5600987

Matus, L G; Powell, J A; Petit, J B

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
• OSTI ID: 5600987
• Report Number(s): N-91-22921; NASA-TM--104398; E--6217; NAS--1.15:104398; CONF-9106258--
• Country of Publication: United States
• Language: English

Related Subjects

440800* -- Miscellaneous Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
CARBIDES
CARBON COMPOUNDS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY GAP
FABRICATION
FIELD EFFECT TRANSISTORS
HIGH TEMPERATURE
JUNCTIONS
P-N JUNCTIONS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SILICON CARBIDES
SILICON COMPOUNDS
TRANSISTORS