Silicon carbide, a semiconductor for space power electronics

Conference · Thu Jan 10 04:00:00 EST 1991 · AIP Conference Proceedings (American Institute of Physics); (United States)

DOI:https://doi.org/10.1063/1.39998· OSTI ID:5335873

Powell, J A; Matus, L G ^[1]

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1. NASA Lewis Research Center, 21000 Brookpark Road, Cleveland, Ohio (USA)

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), {ital in} {ital situ} doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p--n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

• OSTI ID: 5335873
• Report Number(s): CONF-910116--
• Conference Information: Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 217:3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CARBIDES
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DEPOSITION
ELECTRONIC CIRCUITS
ETCHING
EVAPORATION
FABRICATION
FIELD EFFECT TRANSISTORS
JUNCTIONS
MOS TRANSISTORS
MOSFET
NESDPS Office of Nuclear Energy Space and Defense Power Systems
OXIDATION
P-N JUNCTIONS
PHASE TRANSFORMATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SILICON CARBIDES
SILICON COMPOUNDS
SPACE VEHICLE COMPONENTS
SUBLIMATION
SURFACE COATING
SURFACE FINISHING
TRANSISTORS
VERY HIGH TEMPERATURE