The semiconductor waveguide facet reflectivity problem

Journal Article · Sun Aug 01 00:00:00 EDT 1993 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.245556· OSTI ID:5596516

Herzinger, C M; Lu, C C; DeTemple, T A; Chew, W C ^[1]

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1. Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical Engineering

The problem of the facet reflectivity of a semiconductor slab waveguide is reexamined as an extension of Ikegami's original approach but which includes radiation-like modes. The latter are included, using a guide-within-a-guide geometry, as modes bound to a thick air-cladding guide which contains the core profile of interest. In this model with a relatively simple analysis, the coupling from the fundamental mode to radiation modes can be analyzed. The cross-coupling to the radiation modes is considered in detail for the simple double heterostructure waveguide and is shown to be important only for large core-cladding index differences and for strong modal confinement wherein it results in a true facet loss. The conditions for this are the same as for low threshold lasers so that the loss sets a maximum limit on the equivalent internal quantum efficiency. A separate one-dimensional finite element, numerical mode matching program, which treats evanescent and propagating radiation modes, is used as a comparison. The two methods of accounting for radiation modes are shown to be in good agreement: both predict reduced extremes in reflectivity when compared with the original Ikegami model. Modern graded core cases are treated as general examples along with the specific quantum well laser structures taken from the literature. These include II-VI and III-V structures spanning wavelengths from 0.5 [mu]m to 10.0 [mu]m.

• OSTI ID: 5596516
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Vol. 29:8; ISSN 0018-9197
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
WAVEGUIDES
REFLECTIVITY
COUPLING
GAIN
HETEROJUNCTIONS
MATHEMATICAL MODELS
QUANTUM EFFICIENCY
AMPLIFICATION
EFFICIENCY
JUNCTIONS
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SOLID STATE LASERS
SURFACE PROPERTIES
426002* - Engineering- Lasers & Masers- (1990-)