Improvements in avalanche-transistor sweep circuitry for electro-optic streak cameras

Journal Article · Sat Mar 01 04:00:00 EST 1986 · Opt. Eng.; (United States)

DOI:https://doi.org/10.1117/12.7973844· OSTI ID:5595969

Thomas, S W; Griffith, R L; McDonald, W R

The authors have improved the performance of the avalanche-transistor deflector-driver (sweep) circuitry used in the high-speed, electro-optic streak camera at Lawrence Livermore National Laboratory. In the previous design for the sweep circuit, trigger-to-output delay time drifted on some cameras. This delay drift is a function of a somewhat randomly unstable breakdown voltage of some avalanche transistors. Both temperature and differences in manufacturing methods for transistors affect this instability. However, a significant improvement in system performance is achieved by long-term burn in and by selection of only the most stable transistors for the sweep circuit. The peak-to-peak sweep voltage has been increased about 80% by increasing the number of avalanche transistors in the string and raising the quality factor (Q) of the resonant circuit. The result is an improvement in sweep uniformity by a factor of approximately 2. Design equations for selecting components are given. Fast-recovery diodes are used to prevent undershoot and to keep the beam out of the intensifier field of view until after the intensifier is gated off. The sweep time range has been extended to over 100 ns.

• Research Organization: Lawrence Livermore National Laboratory, Univ. of California, P.O. Box 808, Livermore, CA
• OSTI ID: 5595969
• Journal Information: Opt. Eng.; (United States), Journal Name: Opt. Eng.; (United States) Vol. 25:3; ISSN OPEGA
• Country of Publication: United States
• Language: English

Related Subjects

440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BEAM POSITION
BREAKDOWN
CAMERAS
DESIGN
ELECTRIC POTENTIAL
ELECTRO-OPTICAL EFFECTS
ELECTRONIC CIRCUITS
EQUATIONS
LASL
MANUFACTURING
MEASURING INSTRUMENTS
NATIONAL ORGANIZATIONS
PERFORMANCE
RADIATION DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
STREAK CAMERAS
SWEEP CIRCUITS
SWITCHING CIRCUITS
TEMPERATURE EFFECTS
TIME DEPENDENCE
TRANSISTOR SWITCHING CIRCUITS
TRANSISTORS
US AEC
US DOE
US ERDA
US ORGANIZATIONS