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Rate of reduction of photogenerated, surface-confined ferricenium by solution reductants: derivatized n-type silicon photoanode-based photoelectrochemical cells

Journal Article · · ACS Symp. Ser.; (United States)

In this article researchers wish to amplify on previous studies of derivatized photoanode surfaces by reporting new results related to the measurement of k/sup et/ for n-type Si photoanodes derivatized with (1,1'-ferrocenediyl) dichlorosilane, I. researchers report that a number of solution reductants B can be oxidized by the photogenerated, surface-confined ferricenium with a value of k/sub et/ that exceeds 6 x 10/sup 8/ cm/sup 3/ mol/sup -1/ s/sup -1/ at 298 K. Larger values of k/sub et/ cannot be measured owing to difficulties associated with mass transport controlled rates. This would correspond to a homogeneous bimolecular rate constant of > 6 x 10/sup 5/ M/sup -1/ s/sup -1/. In practical terms this means that k/sub et/ is large enough to yield a good value of Phi/sub e/ at solar irradiation intensities and at generally accessible concentrations of B. However, the extent to which the oxidation of B can be driven uphill, E/sub V, is generally modest compared to E/sug g/ = 1.1 eV for Si. Small values of E/sub V give low overall optical energy conversion efficiency.

Research Organization:
Massachusetts Inst. of Tech., Cambridge
OSTI ID:
5592152
Journal Information:
ACS Symp. Ser.; (United States), Journal Name: ACS Symp. Ser.; (United States) Vol. 146; ISSN ACSMC
Country of Publication:
United States
Language:
English

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