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Use of chemically derivatized n-type silicon photoelectrodes in aqueous media: photooxidation of iodide, hexacyanoiron(II), and hexaammineruthenium(II) at ferrocene-derivatized photoanodes

Journal Article · · J. Am. Chem. Soc.; (United States)
DOI:https://doi.org/10.1021/ja00530a015· OSTI ID:5140900

A procedure is described for the chemical derivatization of the surface of n-type semiconductor photoanodes to yield photosensitive interfaces for use in a large number of thermodynamically uphill oxidation processes. (1,1'-ferrocenediyl)dichlorosilane was used to derivatize n-type Si to yield a photoanode that can be used under conditions where the naked (nonderivatized) n-type Si undergoes photoanodic corrosion yielding an insulating SiO/sub x/ surface layer. The results of use of this derivatized n-type Si in aqueous solutions to investigate the photooxidation of iodide, hexacyanoiron(II), and hexaammineruthenium(II) are reported. This type photoelectrode has an operation range that is nearly ideal from the point of solar energy conversion. (BLM)

Research Organization:
Massachusetts Inst. of Tech., Cambridge
OSTI ID:
5140900
Journal Information:
J. Am. Chem. Soc.; (United States), Journal Name: J. Am. Chem. Soc.; (United States) Vol. 102:10; ISSN JACSA
Country of Publication:
United States
Language:
English

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