Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Chemically derivatized semiconductor photoelectrodes: a technique for the stabilization of n-type semiconductors

Journal Article · · Adv. Chem. Ser.; (United States)

Pretreated Au, Pt, n-type Si, and n-type Ge can be derivatized with trichlorosilylferrocene, (1,1'-ferrocenediyl)dichlorosilane, and 1,1'-bis(triethoxysilyl)ferrocene to yield electroactive, surface-attached, oligomeric ferrocene material. Derivatized, n-type semiconductors exhibit photoeffects expected for such an electrode material; irradiated derivatized n-type Si can be used to effect the oxidation of solution reductants by mediated electron transfer, unique proof for which comes from the semiconductor electrode that responds to two stimuli, light and potential. The sustained, mediated oxidation of Fe(CN)/sub 6//sup 4 -/ in aqueous solution in an uphill sense by irradiation of derivatized n-type Si is possible whereas a naked n-type Si undergoes decomposition to SiO/sub x/ at a rate too fast to allow sustained energy conversion. This establishes the principle of manipulating interfacial charge-transfer kinetics for practical applications.

Research Organization:
Massachusetts Inst. of Tech., Cambridge
OSTI ID:
5602202
Journal Information:
Adv. Chem. Ser.; (United States), Journal Name: Adv. Chem. Ser.; (United States) Vol. 184; ISSN ADCSA
Country of Publication:
United States
Language:
English