Optically induced catastrophic degradation in InGaAsP/InP layers

Journal Article · Wed Mar 31 23:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93180· OSTI ID:5588004

Temkin, H; Mahajan, S; DiGiuseppe, M A; Dentai, A G

Laser-induced catastrophic degradation in InGaAsP layers has been investigated. Catastrophic dark line (CDL) defects are generated at the spontaneous radiation flux in excess of 100 MW/cm/sup 2/, significantly higher than in similar GaAlAs structures. In contrast to CDL's in GaAlAs these dark lines are shown to be due to localized melting at material defects and not at cleaved mirror facets. In view of the very high power threshold this type of catastrophic degradation should be of limited importance for the InGaAsP lasers.

• Research Organization: Bell Lab., Murray Hill, NJ
• OSTI ID: 5588004
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CLEAVAGE
COMPARATIVE EVALUATIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEATING
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER-RADIATION HEATING
LASERS
LAYERS
MICROSTRUCTURE
MIRRORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PLASMA HEATING
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THERMAL DEGRADATION