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Physical properties of antimony-doped tin oxide thick films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.331144· OSTI ID:5584253
The physical properties of Sb-doped SnO/sub 2/ thick films, prepared by a repeating chemical spray deposition method, have been investigated. The films 1000--14 000-A thick were deposited on fused quartz, borosilicate glass, and soda lime glass substrates at 600 /sup 0/C using an aqueous solution of a mixture of SnCl/sub 4/ and SbCl/sub 3/. The films prepared by the method are homogeneous, and the electrical resistivity of the films on fused quartz and borosilicate glass substrates were found to be independent of the film thickness, and are 9.5 x 10/sup -4/ ..cap omega.. cm, and 8.6 x 10/sup -4/ ..cap omega.. cm, respectively. The resistivity of the films thicker than 4000 A on soda lime glass substrates is almost constant, and is 1.8 x 10/sup -3/ ..cap omega.. cm, although a large increase in the resistivity of the thinner films was observed. The optical band gap of the films on fused quartz and borosilicate glass substrates is also independent of the film thickness, and is almost the same: 3.75 eV. But the band gap of the films on soda lime glass substrates depends on the film thickness, and increases from 2.85 to 3.08 eV with increasing thickness from 2250 to 13 000 A. The Hall mobility and carrier concentration of the films were also measured. The results of x-ray diffraction analysis and observations by SEM are described.
Research Organization:
Faculty of Engineering, Yamaguchi University, Ube, Japan
OSTI ID:
5584253
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:5; ISSN JAPIA
Country of Publication:
United States
Language:
English