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Title: Epitaxial Y-Ba-Cu-O thin films on MgO deposited by high-pressure reactive magnetron sputtering

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.344151· OSTI ID:5574815
; ; ;  [1]
  1. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853-2501 (US)

Y-Ba-Cu-O thin films have been prepared on MgO(100) substrates by rf reactive magnetron sputtering from a single ceramic target. By adopting high total pressures, typically 280 mTorr, and relatively low substrate temperatures of approximately 650 {degree}C, epitaxial films with the relations (001) YBa{sub 2}Cu{sub 3}O{sub {ital y}}{parallel}(001)MgO and (100)YBa{sub 2}Cu{sub 3}O{sub {ital y}}{parallel}(100)MgO can be reproducibly obtained. A high degree of epitaxy is confirmed by x-ray pole figure measurements and ion channeling. These films require a brief rapid thermal oxygen anneal at typically 850 {degree}C, to exhibit sharp superconducting transitions with zero resistance around 75 K. Films deposited at higher temperatures above 700 {degree}C show transitions as deposited with zero resistance near 80 K. The quality of the transition is correlated with expanded lattice constants with the best transitions occurring in films whose lattice constants approach that of the bulk. The films have high critical current densities of 1--5{times}10{sup 6} A/cm{sup 2} at 4.2 K. They also show good uniformity and excellent surface morphology with a roughness less than 10 nm and can be readily patterned to micrometer and submicrometer dimensions.

OSTI ID:
5574815
Journal Information:
Journal of Applied Physics; (USA), Vol. 66:7; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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