Etching effects in ion implanted SiO sub 2

Conference · Wed Jan 01 00:00:00 EST 1992

OSTI ID:5573451

Battaglin, G ^[1]; Boscolo-Boscoletto, A ^[2]; Caccavale, F; De Marchi, G; Mazzoldi, P ^[3]; Arnold, G W ^[4]

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1. Venice Univ. (Italy). Dipt. di Chimica Fisica
2. EniChem Polimeri, Venice (Italy)
3. Padua Univ. (Italy). Dipt. di Fisica
4. Sandia National Labs., Albuquerque, NM (United States)

Chemical and physical transformations involved in ion implantation processes in glasses determine changes in mechanical. and tribological properties, in network dilatation, in induced optical absorption and luminescence and in the composition and chemical behavior as a function of different experimental conditions (ion, energy, dose, target temperature). Variations of chemical etch rate in HF are related to radiation damages and formation of compounds. A systematic study of the etch rate changes in silica due to Ar, N, Si plus N implants has been performed. Structure modifications at depths greater than the corresponding implanted ion ranges are evidenced for nuclear deposited energy greater than 10{sup 22} keV cm{sup {minus}3}. Formation of silicon oxynitrides reduces the etch rate values.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5573451
• Report Number(s): SAND-92-0437C; CONF-911109-9; ON: DE92011150
• Resource Relation: Conference: Fall meeting of the European Materials Research Society, Strasbourg (France), 5-8 Nov 1991
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON OXIDES
ETCHING
ION IMPLANTATION
ABSORPTION SPECTROSCOPY
ARGON IONS
GLASS
HYDROFLUORIC ACID
NITROGEN IONS
PHYSICAL RADIATION EFFECTS
SILICON IONS
CHALCOGENIDES
CHARGED PARTICLES
FLUORINE COMPOUNDS
HALOGEN COMPOUNDS
HYDROGEN COMPOUNDS
INORGANIC ACIDS
IONS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture
360605 - Materials- Radiation Effects