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The domain structure features of epitaxial PbTiO sub 3 thin films prepared by MOCVD

Conference ·
OSTI ID:5573341
Ferroelectric oxide thin films have attracted great interest in recent years because of their potential applications in numerous electro-optic, pyroelectric, acousto-optical, and nonvolatile memory devices, and a variety of methods such as sputtering, laser ablation, and MOCVD has been used for preparation of the films. Among these ferroelectric materials, the PbTiO{sub 3} thin film has been extensively studied because of its small dielectric constant, large spontaneous polarization, small coercive field, and high Curie temperature of {approximately}500{degrees}C. However, very little work has dealt with the detailed structural properties of the films. In this work, we have prepared epitaxial PbTiO{sub 3} thin films by MOCVD and performed some detailed studies on the structure of the films, particularly those related to the twin domain structure, using X-ray diffraction technique. Based on the comparison of the domain structure features of the films grown at above Curie temperature with those of the films grown at below Curie temperature as well as of bulk PbTiO{sub 3} single crystal, a model is proposed to explain our experimental results.
Research Organization:
Argonne National Lab., IL (United States)
Sponsoring Organization:
DOE; USDOE, Washington, DC (United States)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
5573341
Report Number(s):
ANL/CP-75722; CONF-9203110--3; ON: DE92010907
Country of Publication:
United States
Language:
English