Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

A novel deposition technique for switchable vanadium sesquioxide (V sub 2 O sub 3 ) thin films

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
DOI:https://doi.org/10.1116/1.577389· OSTI ID:5562200
 [1]
  1. LTV Missiles and Electronics Group, Research Department, MS WT-50, Dallas, Texas 75265-0003 (USA)

V{sub 2}O{sub 3} is a phase transition material, which, like other oxides of vanadium, undergoes large changes in optical and electrical properties upon switching from the semiconductor to metal state. The transition in V{sub 2}O{sub 3} occurs at temperatures well below that of oxides in the same family, namely near 150--170 K, making it attractive for a number of low-temperature applications. This material has been deposited by a variety of methods, including chemical vapor transport, rf sputtering of a stoichiometric target, pyrolysis, and heat treatment of a sputtered vanadium oxide film. Thin films of this material have also been prepared by the reduction of predeposited VO{sub 2} thin films, requiring the flow of hazardous gases such as hydrogen or carbon monoxide over the sample, which is held at high temperatures in excess of 700 {degree}C. A direct synthesis method for the deposition of high quality V{sub 2}O{sub 3} thin films with low infrared absorption and resistivity change of more than six orders of magnitude is described. Optical, resistivity, and morphological characteristics of this material are discussed.

OSTI ID:
5562200
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 9:3; ISSN JVTAD; ISSN 0734-2101
Country of Publication:
United States
Language:
English