Chemical mechanisms of Schottky barrier formation
Journal Article
·
· J. Vac. Sci. Technol.; (United States)
Ultrahigh vacuum studies of reactive and unreactive metals on a wide range of semiconductors reveal new systematics of Schottky barrier formation. Surface work function, band bending, and chemical bonding measurements indicate several qualitatively different mechanisms of barrier formation, each determined by the degree of interface chemical reactivity. In general, the Schottky barrier formation can be characterized by a twofold process: local charge redistribution plus surface space charge transfer. The specific interface bonding determines the sign and magnitude of the local charge redistribution. Correlations between these interface phenomena and deviations from ideal barrier heights suggest a framework based on interface bonding for determining Schottky barrier heights.
- Research Organization:
- Xerox Webster Research Center, Webster, New York 14580
- OSTI ID:
- 5552645
- Journal Information:
- J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 16:5; ISSN JVSTA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Schottky barriers on GaAs: Screened pinning at defect levels
Mechanism of Schottky barrier formation: The role of amphoteric native defects
Formation of Schottky barriers at interfaces between metals and molecular semiconductors of {ital p}- and {ital n}-type conductances
Journal Article
·
Sun Feb 28 23:00:00 EST 1999
· Physical Review, B: Condensed Matter
·
OSTI ID:335611
Mechanism of Schottky barrier formation: The role of amphoteric native defects
Journal Article
·
Wed Jul 01 00:00:00 EDT 1987
· J. Vac. Sci. Technol., B; (United States)
·
OSTI ID:6359151
Formation of Schottky barriers at interfaces between metals and molecular semiconductors of {ital p}- and {ital n}-type conductances
Journal Article
·
Thu Aug 01 00:00:00 EDT 1996
· Applied Physics Letters
·
OSTI ID:286526
Related Subjects
36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
AUGER ELECTRON SPECTROSCOPY
BAND THEORY
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CHALCOGENIDES
CHEMICAL BONDS
COATINGS
COHERENT SCATTERING
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
EMISSION
ENTHALPY
FORMATION HEAT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INORGANIC PHOSPHORS
INTERFACES
METALS
PHOSPHORS
PHOTOEMISSION
PHYSICAL PROPERTIES
PNICTIDES
REACTION HEAT
SCATTERING
SCHOTTKY BARRIER DIODES
SECONDARY EMISSION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SPACE CHARGE
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
SYNTHESIS
THERMODYNAMIC PROPERTIES
ULTRAHIGH VACUUM
VAPOR DEPOSITED COATINGS
WORK FUNCTIONS
360104* -- Metals & Alloys-- Physical Properties
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
AUGER ELECTRON SPECTROSCOPY
BAND THEORY
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CHALCOGENIDES
CHEMICAL BONDS
COATINGS
COHERENT SCATTERING
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
EMISSION
ENTHALPY
FORMATION HEAT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INORGANIC PHOSPHORS
INTERFACES
METALS
PHOSPHORS
PHOTOEMISSION
PHYSICAL PROPERTIES
PNICTIDES
REACTION HEAT
SCATTERING
SCHOTTKY BARRIER DIODES
SECONDARY EMISSION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SPACE CHARGE
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
SYNTHESIS
THERMODYNAMIC PROPERTIES
ULTRAHIGH VACUUM
VAPOR DEPOSITED COATINGS
WORK FUNCTIONS