Formation of Schottky barriers at interfaces between metals and molecular semiconductors of {ital p}- and {ital n}-type conductances

Journal Article · Thu Aug 01 04:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.116930· OSTI ID:286526

Harima, Y; Okazaki, H; Kunugi, Y; Yamashita, K ^[1]; Ishii, H; Seki, K ^[2]

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1. Faculty of Integrated Arts and Sciences, Hiroshima University, 1-7-1 Kagamiyama, Higashi-Hiroshima 739 (Japan)
2. Department of Chemistry, Faculty of Science, Nagoya University, Chikusa-ku, Nagoya 464-1 (Japan)

In order to clarify electronic structures of molecular semiconductor/metal interfaces, a Schottky{endash}Mott rule is examined for vacuum-sublimed films of two kinds of porphyrins, which have similar chemical structures, but opposite conductance types. The result shows that Schottky barrier heights are simply determined by the difference in work function between the porphyrin solids and metals irrespective of the conductance types of the porphyrin semiconductors, indicative of negligible influence of surface states on the Schottky barrier formation. Measurements of photocurrent generation efficiencies at these Schottky junctions indicate that a surface recombination process is not a major deactivation route for electron-hole pairs generated in the molecular semiconductors by light. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 286526
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 69; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON-HOLE COUPLING
ELECTRONIC STRUCTURE
INTERFACES
METALS
N-TYPE CONDUCTORS
OPTOELECTRONIC DEVICES
P-TYPE CONDUCTORS
PHOTOCONDUCTIVITY
PHOTOCURRENTS
PORPHYRINS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SURFACE STATES
WORK FUNCTIONS