Dependence of external differential efficiency on laser length and reflectivities in multiple quantum well lasers
Journal Article
·
· Applied Physics Letters; (USA)
- Space and Technology Group, TRW, One Space Park, Redondo Beach, California 90278 (US)
The external efficiency {eta}{sub {ital d}} of quantum well (QW) lasers is maximum at some characteristic laser length, which is dependent upon mirror reflectivities and the number of QWs in the active layer. The observed decrease in {eta}{sub {ital d}} in short lasers is caused by increased optical absorption associated with a high concentration of free carriers in the QW and the surrounding waveguide layer. The carriers spill into the waveguide because of QW subband filling in short cavity lasers with high threshold gains.
- OSTI ID:
- 5552239
- Journal Information:
- Applied Physics Letters; (USA), Vol. 55:9; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
SEMICONDUCTOR LASERS
EFFICIENCY
CARRIER DENSITY
GAIN
LAYERS
OPTIMIZATION
REFLECTIVITY
THEORETICAL DATA
THRESHOLD ENERGY
AMPLIFICATION
DATA
ENERGY
INFORMATION
LASERS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SURFACE PROPERTIES
420300* - Engineering- Lasers- (-1989)
SEMICONDUCTOR LASERS
EFFICIENCY
CARRIER DENSITY
GAIN
LAYERS
OPTIMIZATION
REFLECTIVITY
THEORETICAL DATA
THRESHOLD ENERGY
AMPLIFICATION
DATA
ENERGY
INFORMATION
LASERS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SURFACE PROPERTIES
420300* - Engineering- Lasers- (-1989)