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Title: X-ray diffraction study of GaSb/AlSb strained-layer-superlattices grown on miscut (100) substrates

Conference ·
OSTI ID:5545037
 [1]; ; ;  [2]
  1. Argonne National Lab., IL (United States)
  2. AT and T Bell Labs., Murray Hill, NJ (United States)

A series of superlattices were grown by molecular beam epitaxy on (100) GaSb substrates which had been miscut by 2, 3, and 4 degrees toward the <011> direction. These superlattices were then studied by scanning all possible (444) or (511) (asymmetric) reflections with high resolution multiple-crystal x-ray diffractometry. In addition, the (400) (quasi-symmetric) reflection was scanned. From peak splittings we extracted mismatch and tilt parameters for the epitaxial unit cell. We compared our results for the non-tetragonal component of the distortion ot calculations based on the coherent strain model of Hornstra and Bartels (J. Cryst. Growth 44,513 (1978)). We find that this model which was developed for epitaxial growth on a general (hkl) plane also describes our results for growth on vicinal (100) planes. The resolution of our data is sufficient to establish that the distortion was not purely tetragonal. A monoclinic unit cell symmetry adequately describes our results.

Research Organization:
Argonne National Lab., IL (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
5545037
Report Number(s):
ANL/CP-72290; CONF-9107115-73; ON: DE92009734
Resource Relation:
Conference: Society of Photo-Optical Instrumentation Engineers (SPIE) meeting, San Diego, CA (United States), 21-26 Jul 1991
Country of Publication:
United States
Language:
English