Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Magnetic Instability of Ultrathin fcc Fe{sub {ital x}} Ni{sub 1{minus}{ital x }} Films

Journal Article · · Physical Review Letters
;  [1]; ;  [2]
  1. The Pennsylvania State University, Department of Physics, 104 Davey Lab, University Park, Pennsylvania 16802 (United States)
  2. Department of Chemistry and Material Science, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

The {open_quotes}invar effect{close_quotes} in Fe{sub x}Ni {sub 1{minus}x} alloys occurs when the Fe content approaches 65{percent}. At this point, the magnetization falls to zero, and a martensitic structural transformation from a fcc to a bcc lattice occurs. This paper addresses the question: {open_quotes}What happens if the structural transformation is suppressed in an ultrathin alloy film?{close_quotes} We present results to this effect, showing the variation of the magnetization with changing composition in ultrathin films grown on Cu(100). We find a new low-spin, ferromagnetic phase of matter, which is a sensitive function of the atomic volume. {copyright} {ital 1997} {ital The American Physical Society}

Research Organization:
Lawrence Livermore National Laboratory
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
554417
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 25 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
Country of Publication:
United States
Language:
English

Similar Records

Magnetic x-ray linear dichroism of ultrathin Fe-Ni alloy films
Technical Report · Mon Mar 31 23:00:00 EST 1997 · OSTI ID:603528

Fermi surface study of pseudomorphic Fe{sub 1{minus}x}Ni{sub x} and Co{sub 1{minus}x}Ni{sub x} thin films on Cu(100)
Journal Article · Thu Jul 01 00:00:00 EDT 1999 · Journal of Vacuum Science and Technology, A · OSTI ID:359788

Investigation of face-centered-cubic Fe thin films using wedged samples
Journal Article · Mon Jul 01 00:00:00 EDT 1996 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena · OSTI ID:288421