External cavity semiconductor laser
Patent
·
OSTI ID:5539005
This patent describes an external cavity diode laser system. It comprises a diode laser having a facet and a single active gain region of width D much greater than height H for emitting a single lobe of light and coupled to an external resonator having two ends and comprising beam shaping optics disposed between the ends of the resonator and an output coupling mirror positioned at the end of the resonator opposite the diode laser and optically aligned with the diode laser to focus light from the facet back upon the facet and including a mode aperture dimensioned such that only a single spatial mode of light will propagate in the system and wherein light propagated from the facet in two orthogonal planes travels through the optics in two different paths.
- Assignee:
- Massachusetts Inst. of Technology, Cambridge, MA (United States)
- Patent Number(s):
- A; US 5050179
- Application Number:
- PPN: US 7-341028
- OSTI ID:
- 5539005
- Country of Publication:
- United States
- Language:
- English
Similar Records
External cavity controlled operation of a semiconductor diode gain element in series with an optical fiber
Lateral-mode selectivity in external-cavity diode lasers with residual facet reflectivity
Diode laser with external lens cavity
Journal Article
·
Mon Feb 28 23:00:00 EST 1983
· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:5707116
Lateral-mode selectivity in external-cavity diode lasers with residual facet reflectivity
Journal Article
·
Mon Oct 01 00:00:00 EDT 1990
· IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:5726836
Diode laser with external lens cavity
Patent
·
Mon Feb 18 23:00:00 EST 1991
·
OSTI ID:5741242