Aerosol generation of lanthanum aluminate thin films

Book · Thu Jun 01 04:00:00 EDT 1995

OSTI ID:55365

Vigil, E; Krebs, M; Salazar, A; Clark, R D; Sveum, L; Garcia, D ^[1]

---

1. New Mexico Highlands Univ., Las Vegas, NM (United States)

Lanthanum aluminate thin films were prepared on silicon single crystal substrates. Film precursors were prepared by spray pyrolysis of equal molar lanthanum and aluminate nitrate solutions onto silicon wafers orientated along the <100> plane. These spherical (one to three micron), x-ray amorphous, powder coatings were then annealed in air with the substrate at temperatures from 800 C to 1,300 C. The process was evaluated using XRD, SEM, and EDS techniques. At an annealing temperature of 1,000 C the deposits formed phase-pure, polycrystalline, lanthanum aluminate (R3m). The aluminate coatings bonded to the substrate at about 1,200 C to form polycrystalline thin films oriented along the R3m <001> plane. The films were tightly bonded to the silicon substrate without evidence of cracks but there was evidence of film decomposition or reaction with the substrate.

• OSTI ID: 55365
• Report Number(s): CONF-9310328--; ISBN 1-56676-232-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ANNEALING
CHEMICAL REACTIONS
EXPERIMENTAL DATA
LANTHANUM OXIDES
PYROLYSIS
SCANNING ELECTRON MICROSCOPY
SILICON
SPRAY COATING
SURFACE COATING
THIN FILMS
X-RAY DIFFRACTION
X-RAY SPECTRA