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Electronic structure and properties of sputtered Ta-Cu films

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)
Films of Ta/sub x/Cu/sub 1-//sub x/ have been produced in a co-sputtering system with dc- and rf-sputtering guns and a substrate attached to a rapidly rotating, water-cooled table. Samples were produced in the composition range 0.1less than or equal toxless than or equal to0.9. X-ray diffraction and electrical resistivity data between 4.2 and 300 K have been obtained. Diffraction measurements show that for 0.6less than or equal toxless than or equal to0.9 the samples are glassy. The room-temperature resistivities follow the Mooij correlation with a zero temperature coefficient of resistivity at a resistivity of 35 ..mu cap omega.. cm. The resistivity-versus-temperature data for Ta/sub 0.90/Cu/sub 0.10/ are compared to the extended Ziman-Faber theory and a localization theory by Kaveh and Mott. Of these two theories, the Kaveh-Mott theory best describes the experimental results. Ultraviolet and x-ray photoemission measurements have been made as a function of composition. The position of the Cu 3d levels appears to be correlated with the amorphous or crystalline character of the structure. A linear muffin-tin-orbital calculation of the electronic structure of amorphous Ta/sub 0.59/Cu/sub 0.41/ has been performed. The calculation, based on a periodically extended amorphous cluster of 39 atoms, gave an electronic density of states in good agreement with photoemission results.
Research Organization:
Behlen Laboratory of Physics, University of Nebraska, Lincoln, Nebraska 68588
OSTI ID:
5532014
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 37:5; ISSN PRBMD
Country of Publication:
United States
Language:
English