Nanoscale field emission structures for ultra-low voltage operation at atmospheric pressure

Journal Article · Sat Nov 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.120276· OSTI ID:552941

Driskill-Smith, A A; Hasko, D G; Ahmed, H ^[1]

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1. Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Cambridge CB30HE (United Kingdom)

Novel field emission devices with electron path lengths an order of magnitude less than the elastic mean free path of electrons in air have been fabricated and tested at atmospheric pressure. The nanoscale-tip field emission system consisted of multiple emitter tips of radii about 1 nm within an extractor aperture of diameter 50 nm. The extractor turn-on voltage was approximately 7.5 V; field-emitted currents of up to 10 nA were collected at extractor voltages of less than 10 V. Maximum current densities of over 10{sup 11}Am{sup {minus}2} have been observed, and the emission stability in air at atmospheric pressure is better than 3{percent}. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 552941
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 71; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
APERTURES
ATMOSPHERIC PRESSURE
CURRENT DENSITY
ELECTRON SOURCES
FABRICATION
FIELD EMISSION
MICROELECTRONICS