Indexing the hopper shaped {l_brace}111{r_brace} face produced in chemical vapor deposited diamond

Journal Article · Sat Nov 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.120282· OSTI ID:552936

Menon, P M; Feigerle, C S ^[1]; Thundat, T; Heatherly, L Jr; Clausing, R E ^[2]

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1. Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996-1600 (United States)
2. Oak Ridge National Laboratory, Post Office Box 2008 Oak Ridge, Tennessee 37831-6093 (United States)

The hopper shaped {l_brace}111{r_brace} face frequently observed in cubo octahedral crystallites of diamond has been analyzed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The diamond was grown via hot filament assisted chemical vapor deposition with a feed gas composition of 1{percent} methane in hydrogen. The SEM images of these crystallites show that the {l_brace}100{r_brace} faces are usually flatter than the {l_brace}111{r_brace}. The hopper shaped {l_brace}111{r_brace} faces have been imaged using the tapping mode of the AFM and the angles between planes and their orientations determined. The planes comprising the hoppered {l_brace}111{r_brace} face were found to belong to the {l_brace}221{r_brace} and {l_brace}331{r_brace} family. The implications of the presence of higher index planes as well as other growth features on the growth mechanisms involved are presented. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 552936
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 71; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
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SURFACES
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