Preferential Co{endash}Si bonding at the Co/SiGe(100) interface

Journal Article · Fri Oct 31 23:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119436· OSTI ID:552934

Boyanov, B I; Goeller, P T; Sayers, D E; Newmanich, R J ^[1]

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1. North Carolina University, Raleigh, North Carolina 27695 (United States)

The initial stages of the reaction of Co with Si{sub 0.79}Ge{sub 0.21}(100) were studied {ital in situ} with extended x-ray absorption fine structure spectroscopy and reflection high energy electron diffraction. The Si:Ge ratio in the first coordination shell of Co in sub-monolayer Co films was found to increase with film thickness and annealing temperature, indicating preferential formation of Co{endash}Si bonds. The impact of the observed preference for Co{endash}Si bonding on the morphology of epitaxial CoSi{sub 2}/Si{sub 1{minus}x}Ge{sub x} heterostructures is discussed. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 552934
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 71; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
ANNEALING
CHEMICAL BONDS
CHEMICAL REACTIONS
COBALT
GERMANIUM SILICIDES
HETEROJUNCTIONS
NUCLEATION
SEMICONDUCTOR MATERIALS
STRUCTURAL CHEMICAL ANALYSIS
THIN FILMS