Semiconducting Ge{endash}Si{endash}Fe alloy grown on Si(100) substrate by reactive deposition epitaxy
- Department of Physics, Nanjing University, Nanjing 210093, People`s Republic of (China)
In this letter, we report a semiconducting Ge{endash}Si{endash}Fe alloy thin film grown on Si(100) by reactive deposition epitaxy using high vacuum evaporation technique. This work is based on the idea that the band structure of {beta}-FeSi{sub 2} will be changed with part of the Si atoms in the lattice replaced by Ge atoms. An iron film was first deposited on a SiGe/Si(100) structure, then the alloy was formed during an annealing process. Auger electron spectroscopy and x-ray diffraction results indicate that the new alloy film can be regarded as a distorted {beta}-FeSi{sub 2} thin film with the participation of Ge. The direct band gap of the Ge{endash}Si{endash}Fe alloy is determined to be 0.83 eV by optical transmission measurements, which indicate a redshift of the band gap with regard to that of {beta}-FeSi{sub 2} ({ital E}{sub {ital g}}=0.87 eV) thin films. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 383727
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 69; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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