Reflection high-energy electron diffraction monitored growth of infinite-layer SrCuO{sub 2} thin film heterostructures

Journal Article · Sun Jan 01 04:00:00 EST 1995 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1006/jssc.1995.1027· OSTI ID:552735

Gupta, A; Shaw, T M; Chern, M Y ^[1]

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1. IBM Thomas J. Watson Research Center, NY (United States); and others

Reflection high-energy electron diffraction (RHEED) intensity oscillations have been used for controlled, layer-by-layer growth of thin film heterostructures of the infinite-layer end-member compounds SrCuO{sub 2} and CaCuO{sub 2}. These artificially structured films are grown on (100) SrTiO{sub 3} substrates by pulsed laser deposition under a low-pressure oxygen ambient, using a combination of atomic oxygen and pulsed molecular oxygen, at a relatively low temperature of 500{degrees}C. X-ray diffraction and transmission electron microscopy are used for the structural characterization of the epitaxial heterostructures. Systematic variations in the electrical properties of the multilayers have been observed as a function of the thickness of the SrCuO{sub 2} and CaCuO{sub 2} layers for unit-cell-level modulation periods.

• OSTI ID: 552735
• Journal Information: Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 1 Vol. 114; ISSN 0022-4596; ISSN JSSCBI
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COPPER OXIDES
DEPOSITION
ELECTRON DIFFRACTION
HIGH-TC SUPERCONDUCTORS
STRONTIUM OXIDES
SUBSTRATES
X-RAY DIFFRACTION