Superconducting transition temperatures of two-dimensional ultrathin V films and quasi-two-dimensional V-Si multilayered systems
- Institute for Chemical Research, Kyoto University, Uji 611, Japan (JP)
Ultrathin V films (down to the thickness of 25 A) and V-Si multilayered substances were successfully prepared by ultrahigh-vacuum electron-beam evaporation and were investigated with resistive measurements. The superconducting-transition width was 20--30 mK for all the samples. The transition temperature {ital T}{sub {ital c}} of V films decreases with a decrease in the thickness. We found that in the thicker films this is mainly due to the electron lifetime effect on the density of states (the bulk resistivity effect), but in the thinner films (with larger sheet resistances) the localization and/or interaction effects are essential. Meanwhile, {ital T}{sub {ital c}} of the V-Si systems exhibits a particular dependence on the Si-layer thickness. As the thickness increases, {ital T}{sub {ital c}} decreases linearly up to a certain threshold thickness and then keeps a constant value equal to that of an isolated V film. The result is discussed in the context of a crossover of electron-localization dimensionality.
- OSTI ID:
- 5525657
- Journal Information:
- Physical Review (Section) B: Condensed Matter; (USA), Vol. 40:7; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SILICON
SUPERCONDUCTIVITY
VANADIUM
CORRELATIONS
HETEROJUNCTIONS
LAYERS
SAMPLE PREPARATION
THICKNESS
THIN FILMS
TRANSITION TEMPERATURE
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
JUNCTIONS
METALS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENTS
360104* - Metals & Alloys- Physical Properties
656100 - Condensed Matter Physics- Superconductivity