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Ab initio study of the valence-electron relaxation effect on x-ray-emission spectra and the excitonic effect on electron-energy-loss spectra of the Si L sub 2,3 edge

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ; ;  [1]
  1. Center for Solid State Science, Tempe, Arizona 85287-1704 (United States)
The valence-band-electron relaxation effect on x-ray-emission spectra and the excitonic effect on electron-energy-loss spectra of the Si {ital L}{sub 2,3} edge were studied using an {ital ab} {ital initio} self-consistent pseudo-atomic-orbital method with large unit cells. Comparisons of our theoretical results with experimental x-ray-emission and electron-energy-loss spectra of the Si {ital L}{sub 2,3} edge suggest that there is very little relaxation of valence-band electrons before the 2{ital p} core hole is filled by one of the valence electrons. When including the excitonic effect in electron-energy-loss near-edge-structure calculations, the valence band should therefore be kept the same as the ground state.
DOE Contract Number:
FG02-87ER45305
OSTI ID:
5525050
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:24; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English