Ab initio study of the valence-electron relaxation effect on x-ray-emission spectra and the excitonic effect on electron-energy-loss spectra of the Si L sub 2,3 edge
Journal Article
·
· Physical Review, B: Condensed Matter; (United States)
- Center for Solid State Science, Tempe, Arizona 85287-1704 (United States)
The valence-band-electron relaxation effect on x-ray-emission spectra and the excitonic effect on electron-energy-loss spectra of the Si {ital L}{sub 2,3} edge were studied using an {ital ab} {ital initio} self-consistent pseudo-atomic-orbital method with large unit cells. Comparisons of our theoretical results with experimental x-ray-emission and electron-energy-loss spectra of the Si {ital L}{sub 2,3} edge suggest that there is very little relaxation of valence-band electrons before the 2{ital p} core hole is filled by one of the valence electrons. When including the excitonic effect in electron-energy-loss near-edge-structure calculations, the valence band should therefore be kept the same as the ground state.
- DOE Contract Number:
- FG02-87ER45305
- OSTI ID:
- 5525050
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:24; ISSN 0163-1829; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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