Excitonic Effects in Core-Excitation Spectra of Semiconductors
Journal Article
·
· Physical Review Letters
Core-electron excitation spectra are used widely for structural and chemical analysis of materials, but interpretation of the near-edge structure remains unsettled, especially for semiconductors. For the important Si L{sub 2,3} edge, there are two mutually inconsistent interpretations, in terms of effective-mass excitons and in terms of Bloch conduction-band final states. We report ab initio calculations and show that neither interpretation is valid and that the near-edge structure is in fact dominated by short-range electron-hole interactions even though the only bound excitons are effective-mass-like. (c) 2000 The American Physical Society.
- OSTI ID:
- 20217643
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 10 Vol. 85; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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