Reactive sticking of As sub 4 during molecular beam homoepitaxy of GaAs, AlAs, and InAs

Journal Article · Wed Jan 01 00:00:00 EST 1992 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)

DOI:https://doi.org/10.1116/1.578147· OSTI ID:5524094

Brennan, T M; Tsao, J Y; Hammons, B E ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

We have measured transient and steady-state reflected As{sub 4} and desorbing As{sub 2} fluxes during molecular beam homoepitaxy on the (001) surfaces of GaAs, AlAs, and InAs. In the absence of growth, the reflected As{sub 4} flux decreases, and the desorbing As{sub 2} flux increases, with increasing temperature. In the presence of growth, both fluxes decrease linearly, and then saturate, with increasing group III flux. The saturated reflected As{sub 4} flux depends on temperature, and ranges from approximately 1/2 at temperatures commonly associated with high-quality epitaxy, to zero at lower temperatures; the saturated desorbing As{sub 2} flux is zero, independent of temperature. The reflected As{sub 4} (but not the desorbing As{sub 2} ) flux also depends on surface reconstruction, resulting in unexpected transients as surfaces sequence through various reconstructions upon initiation of growth.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5524094
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Vol. 10:1; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ALUMINIUM ARSENIDES
MOLECULAR BEAM EPITAXY
SORPTIVE PROPERTIES
ARSENIC
ADHESION
GALLIUM ARSENIDES
INDIUM ARSENIDES
DESORPTION
MASS SPECTROSCOPY
SURFACE PROPERTIES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PNICTIDES
SEMIMETALS
SPECTROSCOPY
400201* - Chemical & Physicochemical Properties