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Energy levels of donor and acceptor dopants and electron and hole mobilities in. cap alpha. -Al/sub 2/O/sub 3/

Journal Article · · J. Am. Ceram. Soc.; (United States)

The relation between activation energy of conduction and the position of energy levels of donors and acceptors is discussed. Level positions of donor and acceptor dopants in Al/sub 2/O/sub 3/ at 1600/sup 0/C are recalculated from published data. Carrier concentrations calculated from the new level positions lead to carrier mobilities with values scattering around 1 cm/sup 2/V.s, leaving the question of which conduction model is preferable unanswered. Relations of acceptor level positions with values of ionization potentials, redox potentials, and charge transfer bands are used to predict level positions for other transition metal acceptors.

Research Organization:
Univ. of Southern California, Los Angeles
OSTI ID:
5523080
Journal Information:
J. Am. Ceram. Soc.; (United States), Journal Name: J. Am. Ceram. Soc.; (United States) Vol. 63:1-2; ISSN JACTA
Country of Publication:
United States
Language:
English